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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) *High Switching Speed *High Reliability APPLICATIONS *Switching regulators *DC-DC converter *Solid state relay *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage VALUE 250 UNIT V Collector Current-Continuous Base Current-Continuous w w scs .i w 200 200 7 V V V 10 5 100 150 -55~150 A A W .cn mi e PC TJ Tstg Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2769 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 200 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 B 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 IC= 2A; IB= 0.8A B 7 V VCE(sat) Collector-Emitter Saturation Voltage 0.2 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 5A; IB= 1A B Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain Switching times ton tstg tf Turn-on Time w ww scs .i VEB= 7V; IC=0 VCB= 250V; IE=0 IC= 2A; VCE= 5V .cn mi e 20 1.1 V 0.1 mA 0.1 mA 60 0.8 IC= 6A , IB1= -IB2= 1.2A RL= 10;PW=20s Duty Cycle2% s s s Storage Time 2.0 Fall Time 0.5 isc Websitewww.iscsemi.cn 2 |
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